NCE01P30I mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ)
* Super high dense cell design
* Advanced trench process techno.
It is ESD protested.
General Features
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VG.
The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
* VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (T.
Image gallery
TAGS
Manufacturer
Download (313.48KB)